Memristors as Resistive Random Access Memory (RRAM) News

arXiv.org is reporting in their Condensed Matter > Strongly Correlated Electrons taxonomy a new paper out of UCSD demonstrating phase-transition driven memristive systems using thin-film vanadium dioxides:

Here, we demonstrate memristive response in a thin film of Vanadium Dioxide. This behavior is driven by the insulator-to-metal phase transition typical of this oxide. We discuss several potential applications of our device, including high density information storage. Most importantly, our results demonstrate the potential for a new realization of memristive systems based on phase transition phenomena. (Phase-transition driven memristive system, Authors: Tom Driscoll, Hyun-Tak Kim, Byung-Gyu Chae, Massimiliano Di Ventra, D.N. Basov) [abstract]

Healthy controversy and jargon watch:

Why is it useless for practical application? 1). The phenomenon intrinsically only works at a certain temperature. Deviations by fractions of degrees K will destroy all information. 2). As far as I can see they only demonstrated electrical switching into one direction. To erase the memory both would be required. All in all a nice experiment, but again with typical university style hype, piggybacking on the Memristor craze. [link]

Random web summary:

It turns out that a thin film of vanadium oxide acts like a memrister when a current is passed through it. At a certain critical temperature, the current triggers a phase change in the film, turning it from an insulator to a metal-like conductor. And that significantly changes it’s resistance in a way that can be measured for hours afterwards. In effect, the resistor stores a singe bit of information. Tom Driscoll calls it resistive random access memory or RRAM, in which information is stored in the form of material resistance, which can be changed by an applied voltage [link]