in Papers of Interest: Format: Journal Abstract Title: “Spin Hall Effect Induced by Resonant Scattering on Impurities in Metals” Authors: Albert Fert, Unité Mixte de Physique CNRS/Thales, Peter M. Levy, Department of Physics, New York University Source: American Physical Society, Physical Review Letters Publication Date: 15 April 2011 (c) Attribution: © 2011 American Physical Society […]
With the recent influx of graphene research breakthroughs in attaching magnetic effects to graphene sheets, and MRAM associated material science advances showing more promise for nvram type magnetic and spin based memory, companies in the MRAM space like: Everspin Technologies (a spinoff from Freescale in 2008, pushing ST-MRAM and who hit 16mb stacks last year […]
This years European Science Foundation Graphene Week 2011: Fundamental Science of Graphene and Applications of Graphene-Based Devices, being held this April 24 thru April 29, 2011 near Innsbruck, Austria, will include Andre Geim as Chair! ( A recent paper in Science on results of a team led by Geim has shown evidence of electron flow […]
A paper titled “Transient ferromagnetic-like state mediating ultrafast reversal of antiferromagnetically coupled spins”, submitted last September, has finally made it into Nature Letters, and shows some promise for increasing the reach of spin computing speed, particular to the exchange interaction between Gadolinium, Cobalt, and Iron: …We use the element-specific technique X-ray magnetic circular dichroism to […]
The US National Institute of Standards and Technology has developed a form of memristor built on a flexible substrate, its being widely reported. The paper, titled A Flexible Solution-Processed Memristor, details the researchers at NIST were able create a 14 day window for the non-volatile memristive state: The Nist research team created the memristor using […]
Emerging technology provides a unique opportunity to introduce science within education. The development of Memristors, the fourth passive component type after resistors, capacitors and inductors, along with other Solid State memory devices, takes us one step further to creating cheap, powerful, distributed solutions for sensing and processing.
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