in Papers of Interest (silicon oxide memristors): Format: Journal Abstract Title: “Resistive switching in silicon suboxide films” Authors: Adnan Mehonic, Maciej Wojdak, Stephen Hudziak, and Anthony J. Kenyon (all of Department of Electronic & Electrical Engineering, London, UK) , Sébastien Cueff, Christophe Labbé, and Richard Rizk (all of CIMAP, France), Blas Garrido and Olivier Jambois […]
A paper submitted on arxiv (via the Department of Chemistry and Department of Bioengineering Imperial College in London) details the results of mathematically modeling an ideal framework class of memristors on Bernoullis differential equations: Such differentials can always be linearized and thus make it easier to obtain analytic/closed form expressions of the form v(t) = […]
Emerging technology provides a unique opportunity to introduce science within education. The development of Memristors, the fourth passive component type after resistors, capacitors and inductors, along with other Solid State memory devices, takes us one step further to creating cheap, powerful, distributed solutions for sensing and processing.
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