Panasonic Japan prepares to release ReRam Nonvolatile Memory with Microprocessor Evaluation Kit

Panasonic Japan has a press release out detailing the availability of a microprocessor kit for evaluation that integrates a reram nonvolatile memory chip with a microcomputer. Are transputers back? Panasonic hopes to make the starter kits available for evaluation by May. They will “[…] make a direct connection to the USB port of your PC, […] create a program using a dedicated development environment, compile, and write is possible.” Below the image, is the link to the original press release and a rough english translation.

Read the original press release translated below, or in Japanese at Panasonic Japan.

The industry’s first two ※ , ReRAM nonvolatile memory integrated microcomputer developed new

Starter kit for evaluation Launched in May 2012

Abstract

Panasonic’s device, and the first new non-volatile memory in the industry ReRam has developed a built-in microcomputer. To build a production system to 0.18μm line of Tonami district Hokuriku factory,  will start from May 2012 to provide a starter kit for evaluation of low power consumption, using a sample of this microcomputer.

[Effect]

By using this microcontroller, helping to reduce power consumption of equipment. Low power consumption in standby mode is a strong demand, particularly in mobile devices such as smartphones and other environmental infrastructure equipment and smart meters, you can achieve a long drive and miniaturization of the battery.

[Feature]

This MCU is has the following features.

A. The industry’s first ^{※ 2} by providing built-in microcomputer as a starter kit for evaluation of ReRAM, consideration of possible applications for equipment development

Two. As non-volatile memory built-in microcomputer industry’s top ^{※ one} (or less when operating 4μW 0.9V/32kHz) achieve low power consumption. As well as to achieve operation at 0.9V supply voltage, operating current of approximately 50% when the low-speed operation at 1.8V ^{※ three} approximately 80% operating current, when the clock count ^{※ 3} reduction

Three. A ratio of 5-minute flash microcomputer ^{※ 4} achieve high-speed rewriting of data. External EEPROM [2] can contribute to miniaturization of equipment and by reducing, to shorten the time to write data on the production line

[Contents]

This MCU is made possible by the following techniques.

Embedded low power consumption CMOS process technology ReRAM 1.0.18μm

Two. To achieve low voltage reading in the type ReRAM 1T1R [3] and to realize analog circuit optimization technology, design technology, low power consumption of the microcomputer

Three. Technology, and the resistance change element to achieve 10ns rewriting the memory cell, non-volatile memory operation control technology optimized for ReRAM

[Conventional example;

In environmental infrastructure and mobile devices, in order to drive and long battery miniaturization, low power consumption and built-in nonvolatile memory of the microcomputer control always continue to operate, faster rewrite is called for. The need to meet the needs of these microcomputer is increasing.

[Practical]

Starter kit for evaluation Launched: May 2012 (with respect to provided)

[Patent]

263 national patents (including pending) 147 overseas patent

1. ※ 1 as a microcomputer with built-in nonvolatile memory (operating at 32kHz ~ 500kHz). May 15, 2012, Alps Electric.
2. ※ 2 as non-volatile memory built-in microcomputer. May 15, 2012, Alps Electric.
3. ※ 3 ratio Our Flash microcontroller (operating at 32kHz).
4. ※ 4 compared to our conventional flash microcontrollers.

Description of Features]

A. The industry’s first ^{※ 2} by providing as a starter kit for evaluating the microcomputer with built-ReRAM, the study of the application for the development of equipment is possible
industry technology ReRAM cell type 1T1R was adopted tantalum oxide ^{※ 2} established prior to, was built into the microcontroller as a nonvolatile memory. 
Starter kit for evaluation, to make a direct connection to the USB port of your PC, create a program using a dedicated development environment, compile, and writing is possible. By taking advantage of this starter kit, a program that actually work when the device development is possible.

Two. As non-volatile memory built-in microcomputer industry’s top ^{※ one} (or less when operating 4μW 0.9V/32kHz) achieve low power consumption. As well as to achieve operation at 0.9V supply voltage, operating current of approximately 50% when the low-speed operation at 1.8V ^{※ three} approximately 80% operating current, when the clock count ^{※ 3} reduction
to reduce power consumption of the microcomputer operating voltage Development of low-voltage is effective. In this microcomputer is to allow the operation of the 64kHz maximum at 0.9V, operating current when operating below 4μA 32kHz, the following has been achieved 4μW power consumption. 
In addition, when low-speed operation is achieved following 1.8V/32kHz 4μW by suppressing power consumption to less than 2μA operating current, when the clock count 1.8V/32kHz has been achieved following the operating current of 0.1μA. 
In many battery-powered equipment has continued even when the clock count operation is stopped, the miniaturization of long-term operation of the equipment and battery will be possible by this low power consumption.

Three. A ratio of 5-minute flash microcomputer ^{※ 4} achieve high-speed rewriting of data. Downsizing and possible contribution by reducing the external EEPROM, to shorten the time to write data on the production line
a ratio of 5-minute flash microcomputer ^{※ 4} high-speed rewrite performance and, by realizing a rewrite of the data area of 100,000 times was to facilitate the uptake of microcomputer function to an external EEPROM. 
Devices using the built-in microcontroller non-volatile memory, in many cases, we are writing data on the production line equipment. The realization of high-speed rewriting, you can significantly reduce the time can be written.

Description of Contents]

Embedded low power consumption CMOS process technology ReRAM 1.0.18μm
to 0.18μmCMOS process was reduced to less than one-tenth of our leakage current compared to conventional, was integrated ReRAM. Can be based on the embedded DRAM process technology of ferroelectric memory has made ​​it possible to sample and prototype production system proven in volume production in a short period of time.

Two. Analog circuit optimization techniques to achieve, and design technology to achieve 1T1R type ReRAM read in low voltage, low power consumption of the microcontroller
low voltage drive technology for the memory cell array, low noise power supply circuit technology, low voltage, high sensitivity amplification data read operation is realized by a combination of design technology ReRAM 1T1R type circuit technology, in a stable 0.9V, low power consumption was the ReRAM. In addition, by optimizing the current capability of the analog circuitry of the microcomputer, such as oscillation and the internal power supply circuit, approximately 50% of operating current in 1.8V ^{※ three} reduced to, we have achieved industry-leading low power consumption.

Three. Technology, and the resistance change element to achieve 10ns rewriting the memory cell technology, motion control non-volatile memory which is optimized for ReRAM
by applying a voltage across the resistance change to control the order of nanoseconds the oxygen concentration in the electrode interface layer and the high resistance that has been achieved 10ns rewriting the memory cell. In addition, based on the operation of the flash memory control technology company, has established a control technology works best ReRAM.